Spatial dependence of the strain-induced coupling in highly strained quantum wells.

Composition dependence of the in-plane effective mass in lattice-mismatched, strained Ga1-xInxAs/InP single quantum wells

The composition dependence of the in-plane conduction band effective mass in strained 15nm-thick lattice-mismatched GatJn,As/InP single quantum wells was determined by conventional cyclotron and optically detected cyclotron resonance techniques. Our results are in agreement with a self-consistent calculation taking into account effects due to nonparabolicity, confinement, strain, and finite two...

Non-linear electro-elastic coupling in highly strained zinc-blende compounds: InGaP/GaP [111] quantum wells

Near-infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

The defect distribution in a highly strained Ine,,C$,sAs/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (A-950 nm) with the longer wavelength ( 1000 6 jls 1200 run) luminescence arising from the d...

Very low saturation densities in strained InGaAdAIGaAs multiple quantum wells

The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% ‘and 15%. Very low saturation densities, as low as 0.82X 1017 cmm3...

Effects of quantum well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers

By introducing strain into semiconductor lasers using GaAs/Gai-xlnxAs quantum wells, their modulation bandwidth has been increased to beyond 20 GHz1'2'3& Our approach to high modulation bandwidth strained layer quantum well lasers has been to fabricate short cavity (less than 1OO.tm) multiple quantum well structures. In order to fabricate lasers of this length, the facets must be etched by chem...